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Volumn 76-77, Issue , 1998, Pages 161-167

Biexcitons and dark states in semiconductor microcavities

Author keywords

Biexcitons; Dark states; Microcavities

Indexed keywords

BINDING ENERGY; DAMPING; EXCITONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0031998082     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(97)00143-9     Document Type: Article
Times cited : (7)

References (20)
  • 7
    • 0043024795 scopus 로고    scopus 로고
    • note
    • For polarization along the growth direction, the fundamental mode of the cavity has the same dispersion as a free photon and a situation similar to that of Ref. [10] would result.
  • 12
    • 0041521997 scopus 로고    scopus 로고
    • note
    • The interface and confined phonon modes associated to the multiple quantum well structure may lead to a partial mixing of the b states because they affect the first and last wells differently than those in the middle.
  • 14
    • 0042022924 scopus 로고    scopus 로고
    • V.M. Agranovich et al., in press
    • V.M. Agranovich et al., in press.
  • 16
    • 0042523834 scopus 로고    scopus 로고
    • note
    • It would be interesting to calculate the corrections to the biexciton energy in the presence of the cavity along the lines followed in Ref. [3] for a free quantum well.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.