Possibility of simultaneous monitoring of temperature and surface layer thickness of Si substrate by in situ spectroscopic ellipsometry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 479-483

  Jiang, Zhong Tao ^a   Yamaguchi, Tomuo ^a   Aoyama, Mitsuru ^a   Hayashi, Takahisa ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b DAINIPPON SCREEN MFG CO LTD   (Japan)

Author keywords

Dielectric constants; In situ monitoring; Si; Spectroscopic ellipsometry; Surface layer; Temperature monitoring

Indexed keywords

CRYSTALLINE MATERIALS; CURVE FITTING; ELLIPSOMETRY; ERROR ANALYSIS; MEASUREMENT ERRORS; PERMITTIVITY; SPECTROSCOPIC ANALYSIS; TEMPERATURE MEASUREMENT; THICKNESS MEASUREMENT;

SURFACE ADSORPTION LAYERS;

SILICON WAFERS;

EID: 0031997698     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.479     Document Type: Article

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