Characterization of yttria-stabilized zirconia thin films deposited by electron beam evaporation on silicon substrates

Journal of Materials Science

Volumn 33, Issue 4, 1998, Pages 969-975

  Hartmanova M ^a   Thurzo, I ^a   Jergel, M ^a   Bartos J ^a   Kadlec, F ^b   Zelezny V ^b   Tunega, D ^c   Kundracik, F ^d   Chromik, S ^e   Brunel, M ^f  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c INSTITUTE OF CHEMISTRY   (Slovakia)

^d Physics and Informatics   (Slovakia)

^e INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^f LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTROLYTES; HEAT TREATMENT; INTERFACES (MATERIALS); METAL INSULATOR BOUNDARIES; PHASE COMPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; THERMAL EFFECTS; YTTRIUM COMPOUNDS; ZIRCONIA;

FLAT BAND VOLTAGES; SILICON SUBSTRATES;

THIN FILMS;

EID: 0031997538     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004359727737     Document Type: Article

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