Transistor technologies for RFICs in wireless applications

Microwave Journal

Volumn 41, Issue 2, 1998, Pages 98-110

  Wang, Nan Lei Larry ^a,b,c,d  

^a EiC Corp   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c DARPA sponsored MIMIC Phase II Team ^*  (United States)

^d RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; ELECTRIC NETWORK SYNTHESIS; PERSONAL COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

RADIOFREQUENCY INTEGRATED CIRCUITS (RFIC);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031996649     PISSN: 01926225     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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3. R.S. Muller and T.I. Kamin, Device Electronics for Integrated Circuits, Chapter 5, John Wiley & Sons. 1977.
4. P.R. Gray and R.B. Meyer, Analysis and Design of Analog Integrated Circuits, Chapter 7, John Wiley & Sons, 1977.
5. S.M. Sze, Physics of Semiconductor Devices, Appendix H, John Wiley & Sons, 1981.
6. J.A. Higgins and R.L. Kuvas, "Analysis and Improvement of Intermodulation Distortion in GaAs Power FETs," IEEE Transactions Microwave Theory Techniques, Vol. MTT-28, No. 1, January 1980, pp. 9-17.
7. N.L Wang, W.J. Ho and J.A. Higgins, "Al-GaAs/GaAs HBT Linearity Characteristics," IEEE Transactions Microwave Theory and Techniques, Vol. 42, No. 10, October 1994, p. 1845.
8. W.C.Y. Lee, Mobile Cellular Telecommunications Systems, Chapter 2, McGraw-Hill, 1989.