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Surface Science

Volumn 397, Issue 1-3, 1998, Pages 185-190

Structural determination of the C60/Ge(111) interface via X-ray diffraction

(5) Kidd, Tim a Aburano, R D a,b Hong, Hawoong a Gog, T a,c Chiang, T C a

a University of Illinois at Urbana Champaign (United States)

b CYPRESS SEMICONDUCTOR (United States)

c ARGONNE NATIONAL LABORATORY (United States)

Author keywords

Carbon; Coatings; Germanium; Single crystal epitaxy; Surface relaxation and reconstruction; X ray scattering, diffraction, and reflection

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; DEPOSITION; ELECTROMAGNETIC WAVE REFLECTION; ELECTROMAGNETIC WAVE SCATTERING; EPITAXIAL GROWTH; FULLERENES; MULTILAYERS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

SURFACE RECONSTRUCTION; SURFACE RELAXATION; X RAY REFLECTION; X RAY SCATTERING;

INTERFACES (MATERIALS);

EID: 0031992474 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00731-0 Document Type: Article

Times cited : (9)

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