Inversion of nonperiodic wavefields to determine localized defect structure

Journal of Microscopy

Volumn 190, Issue 1-2, 1998, Pages 262-266

  Beeching, M J ^a   Spargo, A E C ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

Defect; Inversion; Microscopy; Structure; Wavefield

Indexed keywords

DEFECT MODEL; DEFECTS STRUCTURE; ELECTRON MICROSCOPE IMAGES; HIGH RESOLUTION CRYSTAL STRUCTURE; IMAGES SIMULATIONS; INVERSION; LOCALIZED DEFECTS; MULTI SLICES; POTENTIAL DISTRIBUTIONS; WAVEFIELDS;

CRYSTAL STRUCTURE;

SILICON;

DIAGNOSTIC IMAGING; DIAGNOSTIC PROCEDURE; IMAGE ANALYSIS; PRIORITY JOURNAL; REVIEW; SPECTRAL SENSITIVITY; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031921075     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.1998.3010847.x     Document Type: Review

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