Partially carboxymethylated novolaks for photoresist systems: New photoresists for development under mildly alkaline conditions

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 343-346

  Westerwelle, U ^a   Bahr G ^a   Grutzner G ^b   Reuther, F ^b  

^a Inst for Lacke und Farben iLF   (Germany)

^b MICRO RESIST TECHNOLOGY GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISTRY; DISSOLUTION; LITHOGRAPHY; POLYMERS;

PARTIALLY CARBOXYMETHYLATED NOVOLAKS;

PHOTORESISTS;

EID: 0031706886     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00079-3     Document Type: Article

References (6)

1. EP 0176356, Rohm and Haas Comp..
2. EP 0501243 Al, Nippon Paint Co., Ltd..
3. US 5387394, Morton International, Inc..
4. DP 1231712, DP 1246753, DP 1259348, BASF.
5. DBP 871964, Bayer AG.
6. Bähr, G.; Westerwelle, U.; Grützner, G.; Fehlberg, S. Proc. SPIE 1997 3049, 628-638.