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Volumn 6, Issue 1, 1998, Pages 25-33

Radiation resistance of MBE-grown GaInP/GaAs-based solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; IRRADIATION; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC CELLS; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031706864     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199801/02)6:1<25::AID-PIP201>3.0.CO;2-I     Document Type: Article
Times cited : (8)

References (15)
  • 2
    • 0001387101 scopus 로고    scopus 로고
    • Superior radiation-resistant properties of InGaP/GaAs tandem solar cells
    • M. Yamaguchi, T. Okuda, S. J. Taylor, T. Takamoto, E. Ikeda and H. Kurita, 'Superior radiation-resistant properties of InGaP/GaAs tandem solar cells', Appl. Phys. Lett., 70(12), 1566-1568 (1997).
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.12 , pp. 1566-1568
    • Yamaguchi, M.1    Okuda, T.2    Taylor, S.J.3    Takamoto, T.4    Ikeda, E.5    Kurita, H.6
  • 3
  • 4
    • 0028724480 scopus 로고
    • A unified model for radiation resistance of advanced space solar cells
    • Waikoloa, Hawaii, 5-9 December
    • M. Yamaguchi, et al. 'A unified model for radiation resistance of advanced space solar cells', Proc. 1st World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, 5-9 December 1994, pp. 2149-2152.
    • (1994) Proc. 1st World Conference on Photovoltaic Energy Conversion , pp. 2149-2152
    • Yamaguchi, M.1
  • 5
    • 11544284716 scopus 로고    scopus 로고
    • Radiation response of InGaP/GaAs single and dual-junction solar cells
    • Miyazaki, Japan
    • R. J. Walter, et al. 'Radiation response of InGaP/GaAs single and dual-junction solar cells', Technical Digest of International PVSEC-9, Miyazaki, Japan, 1996, pp. 619-620.
    • (1996) Technical Digest of International PVSEC-9 , pp. 619-620
    • Walter, R.J.1
  • 7
    • 11544292438 scopus 로고
    • 1xAs grown by MBE
    • 1xAs grown by MBE'. Jn. J. Appl. Phys., 22(2), L121-L123 (1983).
    • (1983) Jn. J. Appl. Phys. , vol.22 , Issue.2
    • Kondo, K.1
  • 8
    • 11544353431 scopus 로고
    • Hydrogenation of GaAs on Si: Effects on diode reverse leakage current
    • S. J. Pearton, et al. 'Hydrogenation of GaAs on Si: effects on diode reverse leakage current', Appl. Phys. Lett., 51(7), (1987).
    • (1987) Appl. Phys. Lett. , vol.51 , Issue.7
    • Pearton, S.J.1
  • 13
    • 0029208261 scopus 로고
    • Displacement damage dose analog to ionizing radiation effects
    • G. P. Summers, E. A. Burke and M. A. Xapsos. 'Displacement damage dose analog to ionizing radiation effects', Radiat. Meas., 24(1), 1-8 (1995).
    • (1995) Radiat. Meas. , vol.24 , Issue.1 , pp. 1-8
    • Summers, G.P.1    Burke, E.A.2    Xapsos, M.A.3
  • 14
    • 0031672437 scopus 로고    scopus 로고
    • Radiation response of InP/Si and InGaP/GaAs space solar cells
    • R. J. Walters, et al. 'Radiation response of InP/Si and InGaP/GaAs space solar cells', Sol. Energy Mater. Sol. Cell J.
    • Sol. Energy Mater. Sol. Cell J.
    • Walters, R.J.1
  • 15
    • 0030100632 scopus 로고    scopus 로고
    • Correlation of electron and proton irradiation-induced damage in InP solar cells
    • R. J. Walters, et al. 'Correlation of electron and proton irradiation-induced damage in InP solar cells', Prog. Photovolt. Res. Appl., 4, 111-116 (1996).
    • (1996) Prog. Photovolt. Res. Appl. , vol.4 , pp. 111-116
    • Walters, R.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.