Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 313-318

  Parbrook, P J ^a   Ozanyan, K B ^a   Hopkinson, M ^a   Whitehouse, C R ^a   Sobiesierski, Z ^b   Westwood, D I ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MONOLAYERS; PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SURFACE STRUCTURE; THERMAL EFFECTS;

REFLECTION ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031706363     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00454-6     Document Type: Article

References (13)

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