Photoluminescence measurements of GaAs grown by liquid phase epitaxy from Ga-Bi solution

Advanced Materials for Optics and Electronics

Volumn 8, Issue 1, 1998, Pages 9-12

  Ciorga, M ^a   Bryja, L ^a   Misiewicz, J ^a   Paszkiewicz, R ^a   Panek, M ^a   Paszkiewicz, B ^a   Tlaczala M ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

'purification effect'; Ga Bi solution; LPE growth; Photoluminescence

Indexed keywords

EMISSION SPECTROSCOPY; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; PURIFICATION; SEMICONDUCTING FILMS; SOLUTIONS;

PHOTOLUMINESCENCE MEASUREMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031704287     PISSN: 10579257     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-0712(199801/02)8:1<9::AID-AMO322>3.0.CO;2-U     Document Type: Article

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