Critical thickness and growth modes of SiC layers on Si substrates - A molecular dynamics study

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 7-10

  Bhatti, Q A ^a   Matthai, C C ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; SEMICONDUCTING SILICON; STRAIN; SUBSTRATES; THICKNESS MEASUREMENT;

MISFIT DISLOCATIONS;

SILICON CARBIDE;

EID: 0031703249     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00499-6     Document Type: Article

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4. J. Tersoff, Phys. Rev. B 39 (1989) 5566.
5. G.J. Moran, I. Morrison, C.C. Matthai, Mater. Res. Soc. Proc. 339 (1994) 21.
6. T.H. Van der Merve, J. Appl. Phys. 34 (1962) 123.
7. G.J. Moran, I. Morrison, C.C. Matthai, Mater. Res. Soc. Proc. 340 (1994) 315.