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Volumn 123-124, Issue , 1998, Pages 610-614

Surfactant mediated heteroepitaxial growth of Ge/Si(111) probed by X-ray photoelectron diffraction

(4) Dreiner, S a Westphal, C a Sokeland F a Zacharias, H a

Author keywords

Antimony; Epitaxy; Photoelectron diffraction; Semiconductor semiconductor interfaces; Silicon germanium; X ray photoelectron spectroscopy

Indexed keywords

RELAXATION PROCESSES; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROEPITAXIAL GROWTH; PHOTOELECTRON DIFFRACTION;

EPITAXIAL GROWTH;

EID: 0031702593 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00548-5 Document Type: Article

Times cited : (7)

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