(Pb,La)(Zr,Ti)O3 thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition for the charge storage capacitor of a gigabit-scale dynamic random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 198-203

  Shin, Joong Shik ^a   Lee, Won Jong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Capacitor; DRAM; ECR; La doping; PECVD; PLZT; Thin film

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; FERROELECTRIC MATERIALS; HYSTERESIS; LEAD COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA APPLICATIONS; STOICHIOMETRY;

CHARGE STORAGE CAPACITORS; DYNAMIC RANDOM ACCESS MEMORY (DRAM); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

DIELECTRIC FILMS;

EID: 0031701888     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.198     Document Type: Article

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