Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 1146-1149

  Ashkenasy, N ^a   Leibovitch, M ^a   Shapira, Yoram ^a   Pollak, Fred H ^b   Burnham, G T ^c   Wang, X ^c  

^a TEL AVIV UNIVERSITY   (Israel)

^b CITY UNIVERSITY OF NEW YORK   (United States)

^c Semiconduct Laser Intl Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTROOPTICAL DEVICES; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; LIGHT REFRACTION; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

CLADDING LAYERS; ELECTROOPTIC STRUCTURE; HETEROSTRUCTURE LASER; SURFACE VOLTAGE SPECTROSCOPY;

QUANTUM WELL LASERS;

EID: 0031701823     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366807     Document Type: Article

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