High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 293-301

  Voldman, S ^a   Gauthier, R ^a   Reinhart, D ^a   Morrisseau, K ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COPPER; CURRENT DENSITY; ELECTRIC DISCHARGES; ELECTROSTATICS; TRANSMISSION LINE THEORY;

ELECTROSTATIC DISCHARGES (ESD); TRANSMISSION LINE PULSE (TLP) SYSTEMS;

CMOS INTEGRATED CIRCUITS;

EID: 0031701486     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1998.670659     Document Type: Conference Paper

References (33)