Quantum well and quantum dot light emitters confined in oxide-semiconductor microcavities

Optics and Photonics News

Volumn 9, Issue 1, 1998, Pages 30-33

  Deppe, Dennis G ^a   Huffaker, Diana L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CMOS INTEGRATED CIRCUITS; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

OXIDE SEMICONDUCTOR MICROCAVITIES; PARALLEL INTEGRATION; SILICON CHIPS; ULTRASMALL SEMICONDUCTORS;

LIGHT EMITTING DIODES;

EID: 0031700061     PISSN: 10476938     EISSN: None     Source Type: Trade Journal    
DOI: 10.1364/OPN.9.1.000030     Document Type: Article

References (5)

1. 1-x As-AlAs-GaAs quantum-well heterostructures and superlattices," Appl. Phys. Lett. 57, 2844 (1990).
2. D.L. Huffaker et al., "Native-oxide defined ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett. 65, 97 (1994).
3. R. Jager et al., "57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs," Electron. Lett. 33, 330 (1997).
4. D.L. Huffaker et al., "Quantum dot vertical-cavity surfaceemitting laser with a dielectric aperture," Appl. Phys. Lett. 70, 2356 (1997).
5. J.A. Lott et al., "Vertical cavity lasers based on vertically coupled quantum dots," Electron. Lett. 33, 1150 (1997).