Colossal magnetoresistance in gol-gel derived epitaxial thin film of Co-doped La1-xCaxMnOx

Journal of Electronic Materials

Volumn 27, Issue 1, 1998, Pages 1-8

  Bae, Seung Young ^a,c   Snyder, D Jefferey ^b   Wang, Shan Xiang ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

Co doping; Epitaxy; Lanthanum manganites; Magnetoresistance; Sol gel processing

Indexed keywords

COBALT; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; LANTHANUM COMPOUNDS; MAGNETIZATION; MAGNETORESISTANCE; PHASE TRANSITIONS; SOL-GELS; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

CURIE TEMPERATURE; EPITAXIAL THIN FILM; LANTHANUM MANGANITE; SATURATION MAGNETIZATION;

THIN FILMS;

EID: 0031699622     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0328-4     Document Type: Article

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