Modeling of growth processes in epitaxial reactors

Materials Science Forum

Volumn 276-277, Issue , 1998, Pages 135-152

  Carra S ^a   Cavallotti, C ^a   Masi, M ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

CVD; Epitaxy; Low Pressure CVD; Mathematical Models; MOCVD; Plasma Enhanced CVD; Surface Kinetic

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL LATTICES; FLUID DYNAMICS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; MORPHOLOGY; THERMAL EFFECTS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

CRYSTAL GROWTH;

EID: 0031698927     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.276-277.135     Document Type: Article

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