High-temperature single-hole silicon transistors

Superlattices and Microstructures

Volumn 23, Issue 6, 1998, Pages 1333-1339

  Bagraev, N T ^a   Klyachkin, L E ^a   Malyarenko, A M ^a   Gehlhoff, W ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Quantum dot; Single hole tunneling; Transistor

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRON TUNNELING; HIGH TEMPERATURE PROPERTIES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

SINGLE HOLE TUNNELING;

TRANSISTORS;

EID: 0031697811     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0360     Document Type: Article

References (2)

1. W. Gehlhoff, N. T. Bagraev, and L. E. Klyachkin, Sol. St. Phenom. 47-48, 589 (1995).
2. N. T. Bagraev, L. E. Klyachkin, et al. Semiconductors 29, 1112 (1995).