Study of random telegraph signals in a GaAs/AlxGa1-xAssingle electron transistor

Superlattices and Microstructures

Volumn 23, Issue 2, 1998, Pages 413-416

  Sakamoto, Toshitsugu ^a   Nakamura, Kazuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Random telegraph signal trap; Single electron tunneling

Indexed keywords

ELECTRON EMISSION; ELECTRON TUNNELING; HETEROJUNCTIONS; RANDOM PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

RANDOM TELEGRAPH SIGNALS (RTS); SCHOTTKY GATES; SINGLE ELECTRON TUNNELING (SET) TRANSISTORS;

TRANSISTORS;

EID: 0031680438     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0331     Document Type: Article

References (5)

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