Empirical tight-binding applied to silicon nanoclusters

Materials Research Society Symposium - Proceedings

Volumn 491, Issue , 1998, Pages 299-308

  Allan, G ^a   Delerue, C ^a   Lannoo, M ^a  

^a Inst d'Electronique et de   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; MATHEMATICAL TECHNIQUES; PHYSICAL PROPERTIES; POROUS SILICON;

CONDUCTION BANDS; EFFECTIVE MASS APPROXIMATION; TIGHT BINDING METHOD; VALENCE BANDS;

NANOSTRUCTURED MATERIALS;

EID: 0031678931     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (27)