Measurement of the Thermal Conductivity of Si and GaAs Wafers Using the Photothermal Displacement Technique

International Journal of Thermophysics

Volumn 19, Issue 1, 1998, Pages 281-290

  Kim, J H ^a   Seong, D ^a   Ihm, G H ^b   Rhee, C ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

GaAs; Impurities; Phonons; Photothermal displacement technique; Semiconductors; Si; Thermal conductivity; Thermal diffusivity

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL IMPURITIES; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON WAFERS; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL DIFFUSION IN SOLIDS; THERMAL EFFECTS; THERMAL VARIABLES MEASUREMENT; THERMOANALYSIS;

PHOTOTHERMAL DISPLACEMENT TECHNIQUE;

SEMICONDUCTOR MATERIALS;

EID: 0031678290     PISSN: 0195928X     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021467606454     Document Type: Article

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