Formation of high-quality octahedral and flattened diamond crystals on a-SiC/Si using inert-gas curtain combustion method

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 183-189

  Abe, Toshimi ^a   Suemitsu, Maki ^b  

^a TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Combustion flame method; Flattened diamond; Raman; SEM

Indexed keywords

AMORPHOUS FILMS; COMBUSTION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; INERT GASES; MORPHOLOGY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICON CARBIDE; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

FLATTENED DIAMONDS; INERT GAS CURTAIN COMBUSTION METHOD; NUMBER DENSITY;

SYNTHETIC DIAMONDS;

EID: 0031677577     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(97)00404-1     Document Type: Article

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