Nonradiative and radiative recombination of charge carriers in porous silicon under intense laser excitation

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 1, 1998, Pages 231-238

  Shatkovskis, E ^a   Vercinski, J ^a   Jagminas, J ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; LASER BEAM EFFECTS; LUMINESCENCE OF SOLIDS; PHOTOCONDUCTIVITY;

BIMOLECULAR RECOMBINATION PROCESS; LASER EXCITATION; PHOTOMAGNETOELECTRIC EFFECTS;

POROUS SILICON;

EID: 0031676793     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199801)165:1<231::AID-PSSA231>3.0.CO;2-H     Document Type: Article

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