The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

Applied Physics Letters

Volumn 72, Issue 3, 1998, Pages 338-340

  Choy, W C H ^a   Hughes, P J ^a   Weiss, B L ^a   Li, E H ^b   Hong, K ^c   Pavlidis, D ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

TRIMETHYLALUMINUM; TRIMETHYLGALLIUM; TRIMETHYLINDIUM;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031676734     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120729     Document Type: Article

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