Numerical evaluation of energy loss rate for hot carriers in quantum wells

Superlattices and Microstructures

Volumn 23, Issue 1, 1998, Pages 87-92

  Zhu, Bang Fen ^a   Huang, Kun ^a   Zhang, Jian Zhong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Electron phonon interaction; Hot carrier relaxation; Hot phonon effect

Indexed keywords

CARRIER CONCENTRATION; HOT CARRIERS; PHONONS; RELAXATION PROCESSES;

ENERGY LOSS RATE; FROHLICH POTENTIAL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031676726     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0457     Document Type: Article

References (6)

1. J. Shah, IEEE J. Quantum Electron. QE-22, 1728 (1986), and references therein.
2. Kun Huang and Bang-fen Zhu, Phys. Rev. B38, 13377 (1988).
3. Kun Huang and Bang-fen Zhu, Phys. Rev. B38, 2183 (1988); Bang-fen Zhu, Phys. Rev. B38, 7694 (1988); Phys. Rev. B46, 13619 (1992).
4. Kun Huang and Bang-fen Zhu, Phys. Rev. B38, 2183 (1988); Bang-fen Zhu, Phys. Rev. B38, 7694 (1988); Phys. Rev. B46, 13619 (1992).
5. Kun Huang and Bang-fen Zhu, Phys. Rev. B38, 2183 (1988); Bang-fen Zhu, Phys. Rev. B38, 7694 (1988); Phys. Rev. B46, 13619 (1992).
6. K. Leo, W. W. Ruhle, and K. Ploog, Phys. Rev. B38, 1947 (1988).