Effects of halo implant on hot carrier reliability of sub-quarter micron MOSFET's

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 189-193

  Das, A ^a   De, H ^a   Misra, V ^a   Venkatesan, S ^a   Veeraraghavan, S ^a   Foisy, M ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; HOT CARRIERS; ION IMPLANTATION; RELIABILITY; SEMICONDUCTOR JUNCTIONS;

HALO IMPLANT;

MOSFET DEVICES;

EID: 0031676234     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1998.670539     Document Type: Conference Paper

References (7)