Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon

Applied Physics B: Lasers and Optics

Volumn 66, Issue 1, 1998, Pages 95-98

  McClelland, J J ^a   Gupta, R ^a   Celotta, R J ^a   Porkolab, G A ^b,c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b LABORATORY FOR PHYSICAL SCIENCES   (United States)

^c Dominion Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; DEPOSITION; LASER APPLICATIONS; NANOSTRUCTURED MATERIALS; PHOTOLITHOGRAPHY; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

LASER FOCUSED ATOMIC DEPOSITION;

NANOTECHNOLOGY;

EID: 0031675167     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003400050361     Document Type: Article

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11. All dimensions quoted are those found in representative AFM or SEM images taken at various locations on the sample. A full statistical analysis was not carried out over the entire sample, so the values should be considered as nominal representations of the actual widths and feature heights. Horizontal scales were calibrated against the pitch of the lines, the average of which is considered accurate to at least 0.02% (see, e.g., R. Gupta, Z.J. Jabbour, J.J. McClelland, and R.J. Celotta, in proceedings of the Workshop in Industrial Applications of Scanned Probe Microscopy, NIST, Gaithersburg, MD, March 24-25, 1994). The accuracy of nominal horizontal dimensions was limited by the variation of measurements within a given image: ±2% (one standard deviation) for FWHM of Cr lines and ±3% (one standard deviation) for SEM images. The accuracy of the AFM vertical measurements was ±10%. In addition, the minimum value of the Cr thickness was obtained by subtracting an average thickness, so variation of Cr thickness across the sample contributes to the uncertainty in this quantity. In the region of the wire shadow, this variation was ±2 nm (one standard deviation)
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