Photoelectron diffraction as a tool for the study of a buried interface during heteroepitaxial growth of Sb/Ge/Si(111)

Surface Science

Volumn 396, Issue 1-3, 1998, Pages 87-93

  Westphal, C ^a   Dreiner, S ^a   Sokeland F ^a   Zacharias, H ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

Antimony; Epitaxy; Germanium; Low index single crystal surfaces; Photoelectron diffraction; Semiconductor semiconductor interfaces; Silicon; X ray photoelectron spectroscopy

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LATTICE CONSTANTS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROEPITAXIAL GROWTH; PHOTOELECTRON DIFFRACTION;

SURFACE STRUCTURE;

EID: 0031674427     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00661-4     Document Type: Article

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