X-band ENDOR of boron and beryllium acceptors in silicon carbide

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 595-598

  Hofstaetter, A ^a   Meyer, B K ^a   Scharmann, A ^a   Baranov, P G ^b   Ilyin, I V ^b   Mokhov, E N ^b  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Beryllium; Boron Isotopes; Endor; Hyperfine Interaction

Indexed keywords

BERYLLIUM; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC STRUCTURE; ISOTOPES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRON ACCEPTORS; ELECTRON NUCLEAR DOUBLE RESONANCE (ENDOR) SPECTROSCOPY;

SILICON CARBIDE;

EID: 0031674126     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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