The role of fairchild in silicon technology in the early days of "Silicon Valley"

Proceedings of the IEEE

Volumn 86, Issue 1, 1998, Pages 53-62

  Moore, Gordon E ^a,b,c,d,e  

^a INTEL CORPORATION   (United States)

^b Varian Inc   (United States)

^c Betty and Gordon Moore Center for Science and Oceans   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^e NATIONAL ACADEMY OF ENGINEERING   (United States)

Author keywords

Fairchild; Hoerni; Integrated circuit; Noyce; Planar; Shockley; Transistor

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; PATENTS AND INVENTIONS; SEMICONDUCTING SILICON; SOCIETIES AND INSTITUTIONS; TRANSISTORS;

FAIRCHILD SEMICONDUCTOR CORPORATION; SHOCKLEY SEMICONDUCTOR LABORATORY; SILICON TRANSISTOR TECHNOLOGY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031673835     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.658759     Document Type: Article

References (14)

1. M Tannenbaum and D. E. Thomas, "Diffused emitter and base silicon transistors," Bell Syst. Tech J., vol. 35, no. 1, pp. 1-15, Jan. 1956.
2. G. Bemski and J. D. Struthers, "Gold in silicon," presented at the Electrochemical Society Meeting, Buffalo, NY, Oct. 1957.
3. J. Hoerni, U.S. Patent 3025589.
4. R. N. Noyce, U.S. Patent 2981 877, Apr. 25, 1961.
5. E. Keonjian, Microelectronics. New York: McGraw-Hill, 1963, p. 306.
6. "Micrologic," Fairchild Semiconductor Division, Fairchild Camera and Instruments, Mountain View, CA, Aug. 1961.
7. H. C. Theuerer, J. J. Kleimack, H. H. Loar, and H. Christensen, "Epitaxial diffused transistors," presented at the Solid State Research Conf., Pittsburgh, PA, June 1960.
8. See also Proc. IRE, vol. 48, pp. 1642-1643, Sept. 1960.
9. D. Kahng and M. M. Atalla, "Silicon-silicon dioxide field induced surface devices," presented at the Solid State Research Conf., Pittsburgh, PA, June 1960.
10. J. E. Lilienfeld, "Method and apparatus for controlling electric currents," U.S. Patent 1745 175, Jan. 18, 1930.
11. C. T. Sah, "A new semiconductor tetrode, the surface-potential controlled transistor," Proc. IRE., vol. 49, pp. 1623-1634, Nov. 1961.
12. A. S. Grove, Physics and Technology of Semiconductor Devices. Wiley. 1967.
13. F. M. Wanlass and C. T. Sah, "Nanowatt logic using field-effect metal-oxide semiconductor triodes," in Tech. Dig. IEEE 1963 Int. Solid State Circuit Conf., Philadelphia, PA, Feb. 20, 1963, pp. 32-33.
14. C. T. Sah, "Evolution of the MOS transistor-from conception to VLSI," Proc. IEEE, vol. 76, pp. 1280-1326, Oct. 1988.