Electrical characterization of 6H-SiC metal oxide semiconductor structures at high temperature

Journal of the Electrochemical Society

Volumn 145, Issue 1, 1998, Pages 299-302

  Singh, Nitya N ^a,b   Rys, Andrew ^a  

^a Sunflower Networking Group   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE EFFECTS; OXIDATION; SILICON CARBIDE; TEMPERATURE; WETTING;

CAPACITANCE VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE MEASUREMENT CYCLES; WET OXIDATION;

MOS DEVICES;

EID: 0031673213     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838250     Document Type: Article

References (9)

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