SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 23, Issue 1, 1998, Pages 29-33

Photoluminescence characterization of Te-doped GaSb/AlSb superlattices

(4) Ru, Guoping a Li, Aizhen a Zheng, Yanlan a Shen, Wenzhong b

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

GaSb AlSb; Photoluminescence

Indexed keywords

BAND STRUCTURE; ELECTRONS; EXCITONS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

ALUMINUM ANTIMONIDE; GALLIUM ANTIMONIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031673201 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.1996.0294 Document Type: Article

Times cited : (1)

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