The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection

Materials Chemistry and Physics

Volumn 52, Issue 1, 1998, Pages 17-22

  Wang, Y L ^a,c   Liu, C ^a   Feng, M S ^a   Tseng, W T ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Chemical mechanical polishing; Endpoint detection; Pad temperature; Tungsten CMP; Tungsten plug

Indexed keywords

METALLIC FILMS; TITANIUM; TITANIUM NITRIDE; TUNGSTEN; ULSI CIRCUITS;

CHEMICAL MECHANICAL POLISHING; ENDPOINT DETECTION;

CHEMICAL POLISHING;

EID: 0031673133     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)01996-2     Document Type: Article

References (9)

1. W.J. Patrick, W.L. Guthrie, C.L. Standley and P.M. Schiable, J. Electrochem. Soc., 138 (6) (1991) 1778.
2. M.A. Fury, Solid State Technol., (1995) 47.
3. F.B. Kaufman, O.B. Thompson, R.E. Broadie, M.A. Jaso, W.L. Guthrie, D.J. Pearson and M.B. Small, J. Electrochem. Soc., 138 (11) (1991) 3460.
4. C. Yu, S. Poon, Y. Limb, T. Yu and J. Klein, Proceedings of VLSI Multilevel Interconnect Conference (VMIC), 1994, p. 144.
5. S. Roy, Advanced Metallization and Interconnect Systems for ULSI Applications, 1995, p. 733.
6. C.C. Yu et al., U.S. Patent, No. 5240552.
7. W.J. Cote et al., U.S. Patent, No. 5308438.
8. D.A. Koos et al., U.S. Patent, No. 5413941.
9. M. Rutten, P. Feeney, R. Cheek and W. Landers, Semiconductor Int., (1995) 122.