Dielectric properties of extended defects in silicon studied by high-resolution transmission EELS

Journal of Electron Microscopy

Volumn 47, Issue 4, 1998, Pages 311-317

  Kohno, Hideo ^a   Mabuchi, Toshinobu ^a   Takeda, Seiji ^a   Kohyama, Masanori ^b   Terauchi, Masami ^c   Tanaka, Michiyoshi ^c  

^a OSAKA UNIVERSITY   (Japan)

^b Osaka National Research Institute   (United States)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Ab initio calculation; Dielectric function; EELS; Extended defect; Interband transition; JDOS

Indexed keywords

DEFECT STATES; DIELECTRIC PROPERTIES; ELECTRON SCATTERING; ENERGY DISSIPATION; NANOTECHNOLOGY; SEMICONDUCTOR QUANTUM WELLS; SILICON;

AB INITIO CALCULATIONS; DEFECTIVE STRUCTURES; DIELECTRIC FUNCTIONS; DIELECTRICS PROPERTY; EXTENDED DEFECT; HIGH RESOLUTION; INTER-BAND TRANSITION; JDOS; NANO SCALE; TRANSMISSION ELECTRON ENERGY LOSS SPECTROSCOPIES;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 0031666301     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023597     Document Type: Article

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