Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100) surfaces

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 176-180

  Hearne, Sean ^a   Hughes, Greg ^a  

^a DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

Apparent barrier height; I V characteristics; Indium phosphide (InP); Scanning tunnelling spectroscopy (STS); Surface passivation; Tip induced band bending

Indexed keywords

CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; GOLD; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SULFUR; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT DISTANCE CHARACTERISTICS; SCANNING TUNNELING SPECTROSCOPY (STS);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031655533     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00508-4     Document Type: Article

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