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Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 385-390

Transmission coefficients of GaAs/ErAs resonant tunneling diodes in strong magnetic fields

(1) Petukhov, A G a

a SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY (United States)

Author keywords

Magnetic fields; Metal semiconductor interfaces; Quantum wells; Resonant tunneling; Spin effects

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ERBIUM COMPOUNDS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES; SEMICONDUCTOR QUANTUM WELLS;

ERBIUM ARSENIDE; RESONANT TUNNELING DIODES; SPIN ORBIT INTERACTION;

SEMICONDUCTOR DIODES;

EID: 0031655265 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00492-3 Document Type: Article

Times cited : (5)

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