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Journal of Materials Research

Volumn 13, Issue 1, 1998, Pages 126-130

Uniform and rapid nucleation of diamond via bias-assisted hot filament chemical vapor deposition

(3) Chen, Yan a Chen, Feng a Wang, E G a

a INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); ELECTRIC FIELD EFFECTS; FILM GROWTH; GLOW DISCHARGES; NUCLEATION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

AUGER ELECTRON MICROSCOPY; HOT FILAMENT CHEMICAL VAPOR DEPOSITION; NEGATIVE BIAS; NUCLEATION DENSITY;

SEMICONDUCTING DIAMONDS;

EID: 0031654445 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.1998.0017 Document Type: Article

Times cited : (4)

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