A brief study to clarify some aspects related to vibrational density of states for the far infrared range in amorphous semiconductors

Active and Passive Electronic Components

Volumn 20, Issue 3, 1998, Pages 143-145

  Grado Caffaro, M A ^a   Grado Caffaro, M ^a  

^a NONE   (Spain)

Author keywords

Amorphous semiconductors; Far infrared range; Phonon density of states; Structural disorder

Indexed keywords

AMORPHOUS MATERIALS; INFRARED RADIATION; LATTICE VIBRATIONS; LIGHT ABSORPTION; PHONONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

AMORPHOUS SEMICONDUCTORS; FAR INFRARED RANGE; STRUCTURAL DISORDER;

ELECTRONIC DENSITY OF STATES;

EID: 0031652343     PISSN: 08827516     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/93964     Document Type: Article

References (6)

1. Brodsky, M. H. and Lurio, A. (1972). Bull. Am. Phys. Soc., 17, 322.
2. Grado-Caffaro, M. A. and Grado-Caffaro, M. (1992). Phys. Lett. A., 169. 399 - 401.
3. Ladan, F. R. and Zylbersztejn, A. (1972). Phys. Rev. Lett., 28, 1198.
4. Alben, R., Weaire. D., Smith, J. E. and Brodsky, M. H. (1973). Phys. Rev. Lett., 30, 1141.
5. Grado-Caffaro, M A. and Grado-Caffaro, M. (1994). Mod. Phys. Lett. B., 8, 247 - 250.
6. Mitra, S. S., Paul, D K., Tsay, Y. F. and Bendow, B, (1974). AIP Conf. Proc. No. 20, 284 - 289.