Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field

Superlattices and Microstructures

Volumn 23, Issue 5, 1998, Pages 1067-1074

  Sari, H ^a   Ergun Y ^a   Elagoz S ^a   Kasapoglu E ^a   Sokmen I ^b   Tomak, M ^c  

^a CUMHURIYET UNIVERSITY   (Turkey)

^b ÇANAKKALE ONSEKIZ MART UNIVERSITY   (Turkey)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Electric field; Exciton; Graded quantum well; Subband structure

Indexed keywords

BINDING ENERGY; CALCULATIONS; ELECTRIC FIELD EFFECTS; EXCITONS; SEMICONDUCTOR QUANTUM WELLS;

SUBBAND STRUCTURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031651409     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0149     Document Type: Article

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