Tight-binding calculations of complex defects in semiconductors: comparison with ab initio results

Materials Research Society Symposium - Proceedings

Volumn 491, Issue , 1998, Pages 287-298

  Kohyama, M ^a   Arai, N ^a   Takeda, S ^a  

^a OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; MATHEMATICAL TECHNIQUES; SEMICONDUCTING SILICON; SILICON CARBIDE;

COINCIDENCE TILT BOUNDARIES; PLANAR DEFECTS; SELF INTERSTITIAL CLUSTERS; TIGHT BINDING METHODS;

SEMICONDUCTOR MATERIALS;

EID: 0031650893     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (34)