Effect of boron diffusion doping of silicon on the micromechanical and luminescent properties of porous layers

Thin Solid Films

Volumn 312, Issue 1-2, 1998, Pages 202-206

  Makara, V A ^a   Vakulenko, O V ^a   Dacenko, O I ^a   Kravchenko, V M ^a   Ostapchuk, T V ^a   Rudenko, O V ^a   Boltovets, M S ^b   Fesunenko, V O ^b  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b Research Institute Orion   (Ukraine)

Author keywords

Boron diffusion; Hetero interface; Micro hardness; Photo luminescence; Porous silicon; Quantum size effects; Silicon compound

Indexed keywords

COMPOSITE MICROMECHANICS; ETCHING; HARDNESS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; POROUS SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

BORON DOPED SINGLE CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0031650847     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00332-5     Document Type: Article

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