REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 113-118

  Bonfiglio, A ^a   Casu, M B ^a   Vanzi, M ^a   Magistrali, F ^a   Maini, M ^a   Salmini, G ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

POINT DEFECTS; REACTION KINETICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; TRANSMISSION ELECTRON MICROSCOPY;

RECOMBINATION ENHANCED DEFECT REACTION (REDR);

QUANTUM WELL LASERS;

EID: 0031648959     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1998.670459     Document Type: Conference Paper

References (7)