Influence of thermal processing parameters and material properties on velocity configurations in semiconductor melts during the vertical bridgman growth technique

Crystal Research and Technology

Volumn 33, Issue 1, 1998, Pages 27-36

  Bachran, A ^a   Reinshaus, P ^a   Seifert, W ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR GROWTH; TEMPERATURE DISTRIBUTION; THERMODYNAMIC PROPERTIES;

SEMICONDUCTOR MELTS; SOFTWARE PACKAGE FIDAP; THERMAL PROCESSING PARAMETERS; VERTICAL BRIDGMAN GROWTH TECHNIQUE;

SEMICONDUCTOR MATERIALS;

EID: 0031648523     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-4079(1998)33:1<27::aid-crat27>3.0.co;2-o     Document Type: Article

References (4)

1. ADORNATO, P.M., BROWn, R.A.: Journal of Crystal Growth 80 (1987) 155
2. nd European Work-hop on Termolectrics. Nawy. France, ISBN 2-905-267-24-0 (1995)
3. BACHRAN, A., REINSIIUAS, P., SEIFERT, W., SÜSSMAN, H.: Proceedings of the Second European Sympostium - Fluids in Space, pp 465-473, Naples. Italy (1996)
4. JORDAN, A S Journal of Crystal Growth 71 (1985) 551-558.