Metal disilicide contacts to 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 775-778

  Kriz, J ^a   Scholz, T ^b   Gottfried, K ^a   Leibelt, J ^a   Kaufmann, C ^a   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b SGS Institut Fresenius GmbH   (Germany)

Author keywords

High Temperature Stability; Metal Silicide SiC Interface; MoSi2; Ohmic Contacts; WSi2

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; ELECTRIC RESISTANCE MEASUREMENT; MOLYBDENUM ALLOYS; OXIDATION RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; STOICHIOMETRY; THERMODYNAMIC STABILITY; TUNGSTEN ALLOYS;

DEPTH PROFILING; MOLYBDENUM DISILICIDE; TUNGSTEN DISILICIDE;

OHMIC CONTACTS;

EID: 0031648324     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.775     Document Type: Article

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