The effect of high magnetic fields on junction field effect transistor device performance

Review of Scientific Instruments

Volumn 69, Issue 1, 1998, Pages 319-320

  Bodart, J R ^a   Garcia, B M ^a   Phelps, L ^a   Sullivan, N S ^a,b   Moulton, W G ^b   Kuhns, P ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MAGNETS; PERFORMANCE; TRANSCONDUCTANCE;

CURRENT TRANSPORT; CYCLOTRON MOTION; FIELD ORIENTATION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031646791     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1148517     Document Type: Article

References (6)

1. P. M. Andersen, N. S. Sullivan, L. Phelps, and J. B. Legg, Rev. Sci. Instrum, 63, 157 (1992).
2. Motorola Inc., Semiconductor Products, Phoenix, AZ.
3. J. Millman and A. Grabel, Microelectronics (McGraw-Hill, New York, 1987), Chap. 4.
4. Low Power Discretes Data Book Siliconix, Santa Clara, CA 95054-1516, 1991.
5. J. P. McKelvey, Solid State and Semiconductor Physics (Harper and Row, New York, 1966), Chap. 9.
6. Kittel, Introduction to Solid State Physics (Wiley, New York, 1976), Chap. 8.