Material and structural parameter dependencies of photon recycling effects in conventional n+-p InP solar cell

Solar Energy Materials and Solar Cells

Volumn 50, Issue 1-4, 1998, Pages 259-264

  Yamamoto, A ^a   Kurizuka, M ^a   Murshid, Md M ^a   Ohkubo, M ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

InP; n+ p junction; Photon recycling; Solar cell property

Indexed keywords

PHOTONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SURFACE PROPERTIES;

PHOTOCURRENT; PHOTON RECYCLING EFFECTS; SURFACE RECOMBINATION VELOCITY;

SOLAR CELLS;

EID: 0031646473     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00156-6     Document Type: Article

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