Thermal and field dependencies of latent relaxation processes in irradiated MOS devices

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1998, Pages 56-60

  Emelianov, V V ^a   Sogoyan, A V ^a   Cherepko, S V ^a   Meshurov, O V ^a   Ulimov, V N ^a   Chumakov, A I ^a   Rogov, V I ^a   Nikiforov, A Y ^a  

^a Rubber Industry (NIIRP)   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); IRRADIATION; NUMERICAL METHODS; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

CURRENT VOLTAGE MEASUREMENT; RADIATION TOLERANT PROCESS;

MOSFET DEVICES;

EID: 0031644266     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)