Control of defects and impurities in production of CdZnTe crystals by the Bridgman method

Materials Research Society Symposium - Proceedings

Volumn 487, Issue , 1998, Pages 27-32

  Glass, H L ^a   Socha, A J ^a   Bakken, D W ^a   Speziale, V M ^a   Flint, J P ^a  

^a Johnson Matthey Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DENSITY (SPECIFIC GRAVITY); GAMMA RAYS; INFRARED TRANSMISSION; RADIATION DETECTORS; SEMICONDUCTOR GROWTH;

CADMIUM ZINC TELLURIDE; SEMICONDUCTOR DETECTORS; VERTICAL BRIDGMAN TECHNIQUE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031642648     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)