Accurate extraction method for 1/f-noise parameters used in Gummel-Poon type bipolar junction transistor models

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1998, Pages 1345-1348

  Sinnesbichler, F X ^a   Fischer, M ^a   Olbrich, G R ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MODELS; SIGNAL NOISE MEASUREMENT;

BIPOLAR JUNCTION TRANSISTORS (BJT); PARAMETER EXTRACTION METHOD;

BIPOLAR TRANSISTORS;

EID: 0031642573     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)